isocom components 2004 ltd unit 25b, park view road west, park view industrial estate, brenda road hartlepool, cleveland, ts25 1ud tel: (01429) 863609 fax :(01429) 863581 17/7/08 option g 7.62 approvals z ul recognised, file no. e91231 package code " ff " 'x' specification approvals z vde 0884 in 3 available lead form :- - std - g form - smd approved to cecc 00802 description the mct6, mct61, mct62 & mct66 series of optically coupled isolators consist of infrared light emitting diodes and npn silicon photo transistors in space efficient dual in line plastic packages mounted two channels per unit. features z options :- 10mm lead spread - add g after part no. surface mount - add sm after part no. tape&reel - add smt&r after part no. z high isolation voltage (5.3kv rms ) applications z computer terminals z industrial systems controllers z measuring instruments z signal transmission between systems of different potentials and impedances high density phototransistor optically coupled isolators surface mount option sm 10.16 0.26 10.16 9.16 7.0 6.0 7.62 1.2 13 max 0.5 2.54 0.5 0.26 3.0 4.0 3.0 3.35 3 6 45 27 1 8 dimensions in mm absolute maximum ratings (25c unless otherwise specified) storage temperature -40c to + 125c operating temperature -25c to + 100c lead soldering temperature (1/16 inch (1.6mm) from case for 10 secs) 260c input diode forward current 50ma reverse voltage 6v power dissipation 70mw output transistor collector-emitter voltage bv ceo 30v emitter-collector voltage bv eco 6v collector current 50ma power dissipation 150mw power dissipation total power dissipation 170mw (derate linearly 2.67mw/ c above 25c) 10.46 9.86 0.6 0.1 1.25 0.75 mct6, mct61, mct62, mct66 mct6x, mct61x, mct62x, mct66x db92012
17/7/08 parameter min typ max units test condition input forward voltage (v f ) 1.5 v i f = 20ma reverse current (i r )10 av r = 3v output collector-emitter breakdown (bv ceo )30 v i c = 1ma (note 2) emitter-collector breakdown (bv eco )6 v i e = 100 a collector-emitter dark current (i ceo ) 100 n a v ce = 10v coupled current transfer ratio (ctr) (note 2) mct6 20 % 10ma i f , 10v v ce mct61 50 % 5ma i f , 5v v ce mct62 100 % 5ma i f , 5v v ce mct66 6 % 10ma i f , 10v v ce collector-emitter saturation voltage v cesat mct6,61,62 0.4 v 16ma i f , 2ma i c mct66 0.4 v 40ma i f , 2ma i c input to output isolation voltage v iso 5300 v rms see note 1 input-output isolation resistance r iso 5x10 10 v io = 500v (note 1) output rise time, tr 4 si c = 2ma, v ce = 2v, output fall time, tf 3 sr l = 100 (fig. 1) electrical characteristics ( t a = 25c unless otherwise noted ) note 1 measured with input leads shorted together and output leads shorted together. note 2 special selections are available on request. please consult the factory. t on t off 10% 90% 90% t r t f input output 10% fig. 1 db92012m-aas/a4
17/7/08 50 ambient temperature t a ( c ) 150 0 200 ambient temperature t a ( c ) collector power dissipation p c (mw) 60 30 20 10 0 40 50 forward current vs. ambient temperature ambient temperature t a ( c ) 100 0 0.5 1.0 1.5 i f = 10ma v ce = 10v forward current i f (ma) relative current transfer ratio vs. ambient temperature relative current transfer ratio -30 0 25 50 75 100 125 -30 0 25 50 75 100 125 -30 0 25 50 75 100 collector-emitter voltage v ce ( v ) collector current i c (ma) 0 2 4 6 8 10 0 10 20 30 40 50 t a = 25c 10 15 20 30 50 i f = 5ma collector current vs. collector-emitter voltage collector power dissipation vs. ambient temperature 1 2 5 10 20 50 0 0.4 0.6 0.8 1.0 1.2 0.2 1.4 v ce = 10v t a = 25c relative current transfer ratio relative current transfer ratio vs. forward current forward current i f (ma) -30 0 25 50 75 100 ambient temperature t a ( c ) collector-emitter saturation voltage v ce(sat) (v) collector-emitter saturation voltage vs. ambient temperature 0 0.04 0.08 0.12 0.16 0.20 0.24 0.28 i f = 16ma i c = 2ma db92012m-aas/a4
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